Effective-medium tight-binding model for silicon

Effective-medium tight-binding model for silicon.

An Effective-Medium Tight-Binding Model for Silicon

A new method for calculating the total energy of Si systems is presented. The method is based on the effective-medium theory concept of a reference system. Instead of calculating the energy of an atom in the system of interest a reference system is introduced where the local surroundings are similar. The energy of the reference system can be calculated selfconsistently once and for all while th...

Calculation for Energy of (111) Surfaces of Palladium in Tight Binding Model

In this work calculation of energetics of transition metal surfaces is presented. The tight-binding model is employed in order to calculate the energetics. The tight-binding basis set is limited to d orbitals which are valid for elements at the end of transition metals series. In our analysis we concentrated on electronic effects at temperature T=0 K, this means that no entropic term will be pr...

Tight-Binding Calculation of Silicon Bands

In this work we implement a tight-binding calculation of the energy bands of silicon. This traditional method is still employed as a useful approximation for the electronic motion in solids. The tight-binding wavefunctions are taken as linear combinations of atomic orbitals located at each atom in the crystal, based on phase factors e(ik·R) (R are the position of such atoms) for coefficients. T...

Silicon carbide nanostructures: a tight binding approach.

A tight-binding model Hamiltonian is newly parametrized for silicon carbide based on fits to a database of energy points calculated within the density functional theory approach of the electronic energy surfaces of nanoclusters and the total energy of bulk 3C and 2H polytypes at different densities. This TB model includes s and p angular momentum symmetries with nonorthogonal atomic basis funct...